64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

文件：160.84 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

文件：160.84 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 64 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti

文件：160.84 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 64 SRAM

TM

天微

64K x 64 SRAM

TM

天微