64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

文件：1.34713 Mbytes 页数：15 Pages

TMT

凯钰科技

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

文件：1.34713 Mbytes 页数：15 Pages

TMT

凯钰科技

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

文件：1.34713 Mbytes 页数：15 Pages

TMT

凯钰科技

64K x 32 SRAM

GENERAL DESCRIPTION\nThe Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.FEATURES\n■ Fast Access times: ■ Fast Access times: 4.5, 5, 6, 7, and 8ns\n■ Fast clock speed: 125,100, 83, 66, and 50 MHz\n■ Provide high performance 3-1-1-1 access rate\n■ Fast OE access times: 4.5, 5 and 6ns\n■ Single 3.3V +10%/-5% power supply\n■ Common data inputs and data outputs\n■ BYTE WRITE ENABLE and GLOBAL WRIT;

TM

天微

64K x 32 SRAM

GENERAL DESCRIPTION\nThe Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.FEATURES\n■ Fast Access times: ■ Fast Access times: 4.5, 5, 6, 7, and 8ns\n■ Fast clock speed: 125,100, 83, 66, and 50 MHz\n■ Provide high performance 3-1-1-1 access rate\n■ Fast OE access times: 4.5, 5 and 6ns\n■ Single 3.3V +10%/-5% power supply\n■ Common data inputs and data outputs\n■ BYTE WRITE ENABLE and GLOBAL WRIT;

TM

天微

0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter

TM

天微