64K x 32 SRAM

GENERAL DESCRIPTION\nThe Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.FEATURES\n■ Fast Access times: ■ Fast Access times: 4.5, 5, 6, 7, and 8ns\n■ Fast clock speed: 125,100, 83, 66, and 50 MHz\n■ Provide high performance 3-1-1-1 access rate\n■ Fast OE access times: 4.5, 5 and 6ns\n■ Single 3.3V +10%/-5% power supply\n■ Common data inputs and data outputs\n■ BYTE WRITE ENABLE and GLOBAL WRIT;

TM

天微

BGA

TECHNOLOGY

上传：深圳市宝隆宏业科技有限公司

DIP

KEMET/基美

上传：深圳市河锋鑫科技有限公司

DIP

KEMET/基美

上传：深圳市河锋鑫科技有限公司

DIP

KEMET/基美

上传：深圳市河锋鑫科技有限公司