64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

文件：1.34713 Mbytes 页数：15 Pages

TMT

凯钰科技

0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter

TM

天微

64K x 32 SRAM?

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES ■ Fast A

文件：1.34713 Mbytes 页数：15 Pages

TMT

凯钰科技

BGA

TECHNOLOGY

上传：深圳市宝隆宏业科技有限公司

DIP

KEMET/基美

上传：深圳市河锋鑫科技有限公司