| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC |
详细参数
- 型号：
SW1N60C
- 制造商：
SEMIPOWER
- 制造商全称：
SEMIPOWER
- 功能描述：
N-channel D-PAK/I-PAK/TO-92 MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMWIN |
2016+ |
TO-251 |
6528 |
只做原装正品现货!或订货!假一赔十! |
询价 | ||
SAMWIN |
TO-251 |
6688 |
15 |
现货库存 |
询价 | ||
SAMWIN芯源科技 |
2447 |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
SAMWIN |
23+ |
TO-251 |
8160 |
原厂原装 |
询价 | ||
SAMWIN芯源科技 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMWIN |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
询价 | ||
SW |
23+ |
TO251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SAMWIN |
10+ |
TO-251 |
2175 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMWIN |
22+ |
TO-251 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
SAMWIN/芯派 |
2023+ |
TO-251 |
11000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 |
相关规格书
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相关库存
更多- XC6124A243MG-G
- XC6124A248ER-G
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- XC6501B151GR-G
- XC6501B181GR-G
- XC6501B251GR-G
- XC6501B281GR-G
- XC6501B28AGR-G
- VFR3VD31E131T51B
- VFR4100-5FZ
