N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

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台湾半导体

N-Channel Power Enhancement Mode MOSFET

VDS= 600V ID= 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

文件：174.02 Kbytes 页数：4 Pages

TSC

台湾半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08797 Mbytes 页数：9 Pages

VBSEMI

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N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficien

文件：173.91 Kbytes 页数：4 Pages

TSC

台湾半导体