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TSM1N60LCP中文资料台湾半导体数据手册PDF规格书
TSM1N60LCP规格书详情
General Description
The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, highspeed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
特性 Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode.
● IDSS and VDS(on) specified at elevated temperature
产品属性
- 型号：
TSM1N60LCP
- 功能描述：
MOSFET 600V 1A N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TAIWAN SEMI |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
询价 | ||
TOSHIBA |
22+ |
TO252- |
3000 |
原装正品,支持实单 |
询价 | ||
TSC |
06+ |
TO-252 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
taiwansemi |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
询价 | ||
TS |
25+ |
TO-252-2 |
3634 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NK/南科功率 |
2025+ |
SOT-223 |
986966 |
国产 |
询价 | ||
TOSHIBA/东芝 |
24+ |
TO-252-2 |
60000 |
询价 | |||
TAIWAN SEMI |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC/台湾半导体 |
2450+ |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | |||
TSC/台半 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
