TSM1N45D中文资料台湾半导体数据手册PDF规格书
TSM1N45D规格书详情
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration.
特性 Features
● Low gate charge @ typical 6.5nC
● Low Crss @ typical 6.5pF
● Avalanche energy specified
● Improved dv/dt capability
● Gate-Source Voltage ±50V guaranteed
产品属性
- 型号:
TSM1N45D
- 功能描述:
MOSFET 450V .5Amp Dual N Ch Power MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
台半 |
24+ |
SO-8 |
60000 |
全新原装现货 |
询价 | ||
TSC |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC |
24+ |
TO251 |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
TSC |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
TSC/台湾半导体 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC America Inc. |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
TS |
24+ |
TO252 |
5000 |
只做原装公司现货 |
询价 | ||
TOSHIBA |
22+ |
TO-251 |
3000 |
原装正品,支持实单 |
询价 | ||
TSC |
1709+ |
SOP8 |
2855 |
普通 |
询价 | ||
TSC |
25+ |
TO251 |
3732 |
询价 |