TSM1N60中文资料台湾半导体数据手册PDF规格书

VDS= 600V

ID= 1A

RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω

General Description

The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

特性 Features

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a discrete fast recovery diode.

IDSSand VDS(on)specified at elevated temperature