| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：281.13 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.87 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.87 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.86 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.86 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：281.13 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：281.13 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.87 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.87 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.86 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
24+ |
SOT-252 |
196000 |
专营SILAN士兰微原装保障 |
询价 | ||
SILAN/士兰微 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
士兰微 |
24+ |
TO-252 |
2500 |
假一赔百原装正品价格优势实单可谈 |
询价 | ||
杭州士兰 |
两年内 |
NA |
5999 |
实单价格可谈 |
询价 | ||
SILAN(士兰微电子) |
2511 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
SILAN(士兰微电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
SILAN/士兰微 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SILAN/士兰微 |
21+ |
TO220F |
38500 |
询价 | |||
SILAN/士兰微 |
22+ |
TO220F |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
SILAN/士兰微 |
2023+ |
TO220F |
38500 |
原厂全新正品旗舰店优势现货 |
询价 |
相关芯片丝印
更多- SVS7N65FD2
- SVS7N65FD2
- SVS7N65FD2
- SVT1040SATR
- LM25011MYSLASHNOPB
- LM25011MYXSLASHNOPB
- LM25011MY/NOPB
- LM25011MYX/NOPB
- SVXX25LXTP
- SVXX25NXTP
- BZX84J-B3V9
- SMF22VTF
- SMF22V
- SMF22V
- SMF22VTF
- SMF22VTF
- SMF22V
- SMF22VTF
- 1SMA120A
- SMF22VTF
- SMF22V
- SMF22V
- SMA210A
- SMF22VTF
- SMF22VTF
- SMF22VTF
- SMF22VTF
- SMF22VTF
- SMF22V
- SMF22V
- SMF22V
- SMF22VTF
- SMAJ210A
- TMBT3906
- 2PD602ARL/DG
- SMAJ200A
- BZX84J-B3V9-Q
- SMAJ220A
- SWP055R06E7T
- SWB055R68E7T
- SWD065R68E7T
- SWB068R08ET
- SWH160R02VT
- SSW2H100H
- SSW2H40H
相关库存
更多- SVS7N65FD2
- SVS7N65FD2
- SVT1040SA
- SVT3025D4TR
- LM25011MYSLASHNOPB.A
- LM25011MYXSLASHNOPB.A
- LM25011MY/NOPB.A
- LM25011MYX/NOPB.A
- SVXX25NXRP
- SVXX25RXTP
- SMF22V
- SMF22V
- SMF22V
- SMF22V
- SMF22V
- SMF22V
- BZX84J-B3V9
- SMF22VTF
- SMF22VTF
- SMF22V
- SMF22VTF
- SMF22VTF
- SMF22V
- SMF22VTF
- SMF22V
- SMF22VTF
- SMF22V
- SMF22V
- SMF22V
- SMF22VTF
- RP131K521A
- SMAJ190A
- SMAJ210A
- VS20VUA1VWM
- BZX84J-B3V9
- SMAJ200
- SMAJ200A
- 2PD602ARLSLASHDG
- SWP055R68E7T
- SWP058R72E7T
- SWP068R08ET
- SWF13N65D
- SW20N50D
- SWT22N65D
- SSW2H60H
