SVD7N65AF丝印代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SVD7N65AF	文件：1.50561 Mbytes Page：7 Pages	丝印：SVD7N65AF；Package：TO-220F-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-sta 文件：1.50561 Mbytes 页数：7 Pages	SILAN 士兰微	SILAN
SVD7N65AF	文件：1.50561 Mbytes Page：7 Pages	丝印：SVD7N65AF；Package：TO-220F-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-sta 文件：1.50561 Mbytes 页数：7 Pages	SILAN 士兰微	SILAN

更多SVD7N65AF供应商更新时间2025-9-11 10:20:00