isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S), 175C MOSFET

文件：73.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

文件：916.51 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement-Mode Trans

Vishay

威世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.13 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 62A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

文件：80.29 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

文件：917.49 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：916.57 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：916.56 Kbytes 页数：8 Pages

VBSEMI

微碧半导体