丝印：50P06；Package：TO-252；-60V P-Channel MOSFET

APPLICATIONS Load Switch

文件：441.73 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：50P06-15；Package：TO-252-3L；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VaGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：2.72235 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：50P06；Package：TO-252；-60V P-Channel MOSFET

PRODUCT SUMMARY VDS (V) = -60V RDS(ON)

文件：304.68 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch

文件：233.65 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

P-Channel 60-V (D-S) MOSFET

文件：89.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

丝印：DPAK；Package：TO-252；Isc P-Channel MOSFET Transistor

文件：267.08 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60 V (D-S) MOSFET

Vishay

威世科技

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch

文件：233.65 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -50A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =15mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.41 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60 V (D-S) MOSFET

文件：971.71 Kbytes 页数：7 Pages

VBSEMI

微碧半导体