N-Channel 60-V (D-S), 175C MOSFET

N-Channel 60-V (D-S), 175°C MOSFET 175 °C Rated Maximum Junction Temperature TrenchFET® Power MOSFETs Product Summary    V(BR)DSS   60 V    rDS(on)    0.018 Ω    ID         60 A

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VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半导体

N-Channel Enhancement-Mode Trans

Vishay

威世