| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
8-bitMicrocontrollers | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280 | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
SchottkyBarrierDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HIGHCURRENTPHASECONTROL | POSEICO Power Semiconductors | POSEICO | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelsiliconfield-effecttransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz) SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
BPS310Series-12mmUncompensatedLowPressureSensor | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams | BYTES Bytes | BYTES | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER VOLTAGERANGE-50to1000VoltsCURRENT-3.0Amperes FEATURES *Surgeoverloarating:50Amperespeak *Lowforwardvoltagedrop *Smallsize:simpleinstallation | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM |
详细参数
- 型号：
STYN310S
- 功能描述：
Discrete Thyristors(SCRs)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ST |
TO220 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
TO220 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST |
23+ |
TO-263 |
35628 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST/意法 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
ST |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ST |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
99439 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
99439 |
询价 | |||
ST |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 |
相关规格书
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- STYN416S
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- STZ6.8N_11
- STZ6.8T
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- STZ68N
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- STZ8047B
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- STZ8051B
- STZ8056
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- STYNX55
- STZ-1-AP1
- STZ23C5V6WS
- STZ5.6N_11
- STZ56N
- STZ6.2N_11
- STZ6.8N
- STZ6.8NT146
- STZ6.8T_11
- STZ62N
- STZ8000
- STZ8027
- STZ8027B
- STZ8030A
- STZ8033
- STZ8033B
- STZ8036A
- STZ8039
- STZ8039B
- STZ8043A
- STZ8043C
- STZ8047A
- STZ8047C
- STZ8051A
- STZ8051C
- STZ8056A
