SONET/SDH Transmitters & Receivers

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High voltage fast-switching NPN power transistor

Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Features ■ High volta

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STMICROELECTRONICS

意法半导体

SILICON NPN POWER DARLINGTON TRANSISTOR

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applica

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STMICROELECTRONICS

意法半导体

SILICON NPN POWER DARLINGTON TRANSISTOR

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applica

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STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

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STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：344.24 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

AC-DC PWM CONTROLLER PRIMARY SWITCHING REGULATORS

DESCRIPTION The AP8010 is a high performance AC-DC off‐line controller for low power battery charger and adapter applications with Universal‐input. It uses Pulse Frequency and Width Modulation (PFWM) method to build discontinuous conduction mode (DCM) flyback power supplies. The AP8010 util

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AITSEMI

创瑞科技

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：236.1 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：344.24 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：344.24 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体