首页 >STWA68N65DM6AG>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STWA68N65DM6AG | Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is 文件:275.96 Kbytes 页数:12 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STWA68N65DM6AG | Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected; | ST 意法半导体 | ST | |
Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This 文件:555.1 Kbytes 页数:15 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Desc 文件:1.55614 Mbytes 页数:15 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM 文件:258.279 Kbytes 页数:12 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package:
TO-247 long leads
- Grade:
Automotive
- VDSS(V):
650
- RDS(on)_max(@ VGS=10V)(Ω):
0.039
- Drain Current (Dc)_max(A):
72
- PTOT_max(W):
480
- Qg_typ(nC):
118
- Features:
Fast recovery diode
- Reverse Recovery Time_typ(ns):
142
- Qrr_typ(nC):
900
- Peak Reverse Current_nom(A):
10.6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
NA |
1272000 |
原装现货,实单价格可谈 |
询价 | ||
ST(意法半导体) |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST |
1107 |
只做正品 |
询价 | ||||
ST(意法半导体) |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST |
25+ |
TO-247 long leads |
12500 |
ST系列在售,可接长单 |
询价 | ||
STM |
25+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
STMicroelectronics |
2022+ |
TO-247-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST(意法) |
24+ |
TO-247-3 |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 |
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