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STWA68N65DM6AG

Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

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STMICROELECTRONICS

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STWA68N65DM6AG

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

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SH68N65DM6AG

Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

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STMICROELECTRONICS

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STO68N65DM6

N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Desc

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STMICROELECTRONICS

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STWA68N65DM6

N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件:258.279 Kbytes 页数:12 Pages

STMICROELECTRONICS

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技术参数

  • Package:

    TO-247 long leads

  • Grade:

    Automotive

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.039

  • Drain Current (Dc)_max(A):

    72

  • PTOT_max(W):

    480

  • Qg_typ(nC):

    118

  • Features:

    Fast recovery diode

  • Reverse Recovery Time_typ(ns):

    142

  • Qrr_typ(nC):

    900

  • Peak Reverse Current_nom(A):

    10.6

供应商型号品牌批号封装库存备注价格
ST
23+
NA
1272000
原装现货,实单价格可谈
询价
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ST
1107
只做正品
询价
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ST
25+
TO-247 long leads
12500
ST系列在售,可接长单
询价
STM
25+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
22+
TO2473
9000
原厂渠道,现货配单
询价
STMicroelectronics
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST(意法)
24+
TO-247-3
32000
全新原厂原装正品现货,低价出售,实单可谈
询价
更多STWA68N65DM6AG供应商 更新时间2026-2-1 8:01:00