STWA68N65DM6AG中文资料意法半导体数据手册PDF规格书

厂商型号	STWA68N65DM6AG
功能描述	Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
文件大小	275.96 Kbytes
页面数量	12 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 23:00:00
人工找货	STWA68N65DM6AG价格和库存，欢迎联系客服免费人工找货

特性 Features

• AEC-Q101 qualified

• Fast-recovery body diode

• Lower RDS(on) per area vs previous generation

• Low gate charge, input capacitance and resistance

• 100 avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

描述 Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery

diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Applications

• Switching applications