Automotive-grade N-channel 650 V, 35 mOhm typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

\n\n This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. • AQG 324 qualified \n• Half-bridge power module \n• 650 V blocking voltage \n• Fast recovery body diode \n• Very low switching energies \n• Low package inductance \n• Dice on direct bond copper (DBC) substrate \n• Low thermal resistance \n• Isolation rating of 3.4 kVrms/min;

ST

意法半导体

Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

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STMICROELECTRONICS

意法半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：AUTOMOTIVE-GRADE N-CHANNEL 650 V

STMICROELECTRONICS

意法半导体

N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Desc

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STMICROELECTRONICS

意法半导体

N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

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STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：275.96 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体