N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Desc

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STMICROELECTRONICS

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N沟道650 V、53 mOhm典型值、55 A MDmesh DM6功率MOSFET，TO-LL封装

该高电压N-沟道功率MOSFET来自MDmesh DM6快速恢复二极管系列。与之前的MDmesh快速恢复二极管相比，DM6兼具超低恢复电荷（Qrr）和超快恢复时间（trr），并且在单位面积的RDS(on)值方面有了极大改进，采用市场上最高效的开关行为之一，适用于要求最苛刻的高效桥式拓扑和ZVS移相转换器。 • 快速恢复体二极管 \n• 与上一代相比，具有更低的单位面积RDS(on)值 \n• 低栅极电荷、输入电容和电阻 \n• 经过100％雪崩测试 \n• 非常高的dv / dt耐用性 \n• 稳压保护 \n• 分离驱动源极引脚使其具有出色的开关性能;

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N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

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STMICROELECTRONICS

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Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：275.96 Kbytes 页数：12 Pages

STMICROELECTRONICS

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