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36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh™IIPowerMOSFETinaD²PAKpackage

Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh™IIPowerMOSFETinaD²PAKpackage

Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB36NM60N

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW36NM60N

N-channel600V,0.092Ω,29A,MDmesh™IIPowerMOSFETinTO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh™technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST
0-NEW
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
只做原装
21+
QFN
36520
一级代理/放心采购
询价
ST/意法
22+
QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
STM
1809+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
ST
22+
TO2473
9000
原厂渠道,现货配单
询价
ST-意法半导体
24+25+/26+27+
TO-247-3
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
STMicroelectronics
23+
SMD
67000
原装正品实单可谈 库存现货
询价
ST/意法半导体
21+
TO-247-3
8800
公司只做原装正品
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
77
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询价
更多STWA36NM60ND供应商 更新时间2024-6-11 16:10:00