N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET

DESCRIPTION The Max220TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count

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N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR

N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH

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N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

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N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

文件：403.4 Kbytes 页数：9 Pages

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N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

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N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, l

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. F

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N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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