丝印：T20100Y；Package：TO-252AA；Surface Mount Low VF Schottky Barrier Rectifier

Features  Low power loss, high efficiency  High surge current capability  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：299.07 Kbytes 页数：5 Pages

PANJIT

強茂

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 页数：18 Pages

Sanken

三垦

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 页数：18 Pages

Sanken

三垦

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 页数：18 Pages

Sanken

三垦

DIP8 package, connecting one side (pin5 to pin8) with a power MOSFET drain.

General Descriptions The STR2A100 series are power ICs for switching power supplies, incorporating a power MOSFET and a current mode PWM controller IC in one package. Including a startup circuit and a standby function in the controller, the product achieves low power consumption, low standby po

文件：357.66 Kbytes 页数：18 Pages

Sanken

三垦

STR2-nano microstepping motor drive

■■ Compact Size for Mounting ■■ Current range 0.3A to 2.2A/Phase ■■ Step & Direction or CW/CCW Pulse control ■■ Automatic idle current reduction ■■ Built-in self test move profile ■■ DIP switch setup - no software required ■■ Electronic damping (anti-resonance) ■■ Microstepping & Microstep

文件：690.54 Kbytes 页数：2 Pages

MCLENNAN

丝印：2K3L；Package：SOT-23；Very low on-resistance

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：547.07 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. STR2P3LLH6 Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

文件：755.98 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

Standard 4/18 silver braided power cord.

文件：863.67 Kbytes 页数：2 Pages

LUMINIS

Switching Type(Chopper * Self Oscillation Type)

文件：40.94 Kbytes 页数：3 Pages

Sanken

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