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STR2P3LLH6中文资料意法半导体数据手册PDF规格书
STR2P3LLH6规格书详情
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Features
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法半导体 |
21+ |
SOT-23-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
24+ |
SOT-23 |
45000 |
热卖优势现货 |
询价 | ||
ST |
23+ |
NA |
20054 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
ST |
24+ |
SOT-23 |
98000 |
原装现货假一罚十 |
询价 | ||
ST/意法 |
24+ |
N/A |
14280 |
强势渠道订货 7-10天 |
询价 | ||
ST/意法半导体 |
23+ |
SOT-23-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST |
24+ |
SOT-23 |
3600 |
原装现货假一赔十 |
询价 | ||
STMicroelectronics |
2025 |
6000 |
全新、原装 |
询价 |
