P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. STR2P3LLH6 Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

文件：755.98 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：2K3L；Package：SOT-23；Very low on-resistance

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：547.07 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

P沟道30 V、0.048 Ohm典型值、2 A STripFET H6功率MOSFET，SOT-23封装

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

ST
LFBGA144

ST

上传：海芯未来半导体电子（深圳）有限公司

ST
QFP-144

ST

上传：深圳市百纳智芯科技有限公司