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STPSC10C065-Y中文资料Automotive 650 V power Schottky silicon carbide diode数据手册ST规格书
STPSC10C065-Y规格书详情
描述 Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.
特性 Features
• AEC-Q101 qualified
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• Recommended to PFC applications
• PPAP capable
• ECOPACK®2 compliantcomponent
技术参数
- 制造商编号
：STPSC10C065-Y
- 生产厂家
：ST
- Number of Diodes_spec
：1
- Marketing Status
：Active
- Repetitive Peak Reverse Voltage_max(V)
：650
- Average Rectified Current_max(A)
：10
- VF_max(V)
：1.75
- VF measure condition_spec(@ IF)(A)
：10
- Reverse Current_max(mA)
：0.1
- Total capacitive charge(nC)
：26.4
- Non-Repet Peak Forward Surge Current_max(A)
：85
- Junction Temperature_max(°C)
：175
- General Description
：Automotive 650 V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
1902 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-2 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-252-3 (DPAK) |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法 |
21+ |
SOT-252 |
5000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST |
25+23+ |
DPAK |
24440 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
ST/意法半导体 |
23+ |
D2PAK-2 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-2 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
2223+ |
SOT-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法 |
23+ |
SOT-252 |
5000 |
原装正品实单必成 |
询价 | ||
ST |
23+ |
TO-252 |
16900 |
正规渠道,只有原装! |
询价 |
