STP5N120,5N120规格书批发采购友顺UTC-114ic电子网

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5N120	文件：451.43 Kbytes Page：7 Pages	5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A LowReverseTransferCapacitance *FastSwitchingCapabilit	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTG5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP5N120	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120BN	文件：82.52 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco	Intersil Intersil Corporation	Intersil
HGTP5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
HGTP5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP5N120CN	文件：80.54 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBT TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	Intersil Intersil Corporation	Intersil
HGTP5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	Intersil Intersil Corporation	Intersil
SGH5N120RUF	文件：464.69 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH5N120RUFD	文件：513.9 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
STP5N120	文件：296.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STP5N120	文件：186.55 Kbytes Page：10 Pages	N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
UG5N120	文件：288.53 Kbytes Page：3 Pages	NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
中科航电（深圳）电子集团有限公司	STP5N120,5N120	ST		TO-220	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市中飞芯源科技有限公司	STP5N120,5N120	ST	23+	TO-220	6000	原装,可配单	询价
深圳市宏捷佳电子科技有限公司	STP5N20P	ST	23+	TO-TO-220	33500	全新原装真实库存含13点增值税票!	询价
深圳市国宇半导体科技有限公司	STP5N20P	ST/意法	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	STP5N20P	ST	TO-220	22+	6000	十年配单,只做原装	询价
中科国际电子(深圳)有限公司	STP5N20P	ST	22+	TO-220	66900	原厂原装现货	询价
深圳市赛特兴科技有限公司	STP5N20P	ST	23+	TO-220	16900	正规渠道,只有原装!	询价
深圳市星佑电子有限公司	STP5N20P	ST	22+	TO-220	16900	支持样品原装现货提供技术支持!	询价
深圳市创新迹电子有限公司	STP5N20P	ST	22+	TO-220	25000	只做原装进口现货,专注配单	询价
深圳市外芯人半导体有限公司	STP5N20P	ST	24+	TO-220	200000	原装进口正口,支持样品	询价

更多STP5N120,5N120供应商更新时间2024-9-23 17:08:00

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