N-CHANNEL enhancement mode power mos transistor

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

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STMICROELECTRONICS

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N-CHANNEL enhancement mode power mos transistor

ST

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Power MOSFET

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VBSEMI

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N-Channel 650 V (D-S) MOSFET

文件：1.09022 Mbytes 页数：9 Pages

VBSEMI

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N-Channel 650V (D-S) Power MOSFET

文件：1.90679 Mbytes 页数：9 Pages

VBSEMI

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