N-Channel 650 V (D-S) MOSFET

文件：1.09022 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.90679 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions o

文件：116.62 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Ideal for automated placement

文件：110.36 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司