Super high dense cell design for extremely low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：139.77 Kbytes 页数：8 Pages

Samhop

三合微科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 36mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：948.96 Kbytes 页数：3 Pages

DOINGTER

杜因特

Mosfets

Samhop

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