isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.1 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POW

文件：197.7 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Tmax Molded Case Circuit Breakers

文件：3.14276 Mbytes 页数：81 Pages

ABB

ABB集团

Tmax Molded Case Circuit Breakers

文件：3.14276 Mbytes 页数：81 Pages

ABB

ABB集团

Advanced planar process

文件：823.63 Kbytes 页数：6 Pages

TSC

台湾半导体