Advanced planar process

文件：823.63 Kbytes 页数：6 Pages

TSC

台湾半导体

1000V, 2.5A, Single N-Channel Power MOSFET

TSC

台湾半导体

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

文件：148.75 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

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Motorola

摩托罗拉

TMOS POWER FET 3.0 AMPERES 1000 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination s

文件：262.24 Kbytes 页数：10 Pages

Motorola

摩托罗拉