CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU16N10L

N-ChannelMOSFETusesadvancedtrenchtechnology

CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CEU16N10SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

ST16N10

N-ChannelMOSFETusesadvancedtrenchtechnology

ST16N10

N-Channel100V(D-S)MOSFET

ST16N10

TO-252Packagedesign

ST16N10-TP

N-Channel100-V(D-S)MOSFET

Features ®Ros10m0@VGS=10vV ®SuperhighdensitycelldesignforextremelylowRos)| ®Exceptionalon-resistanceandmaximumDCcurrent

WSP16N10

N-ChannelMOSFETusesadvancedSGTtechnology

WSP16N10

N-ChMOSFET