丝印：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ® Ros 10m0@VGS=10vV ® Super high density cell design for extremely low Ros) | ® Exceptional on-resistance and maximum DC current

文件：2.67918 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 100-V (D-S) MOSFET

文件：939.26 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.14 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTE

文件：50.24 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.13 Kbytes 页数：2 Pages

ISC

无锡固电