首页>STL45N60DM6>规格书详情
STL45N60DM6数据手册ST中文资料规格书
STL45N60DM6规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STL45N60DM6
- 生产厂家
:ST
- Package
:PowerFLAT 8x8 HV
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.11
- Drain Current (Dc)_max(A)
:25
- PTOT_max(W)
:160
- Qg_typ(nC)
:44
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:105
- Qrr_typ(nC)
:480
- Peak Reverse Current_nom(A)
:9.3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
PowerFLAT8x8-5 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
23+ |
PowerFLAT8x8-5 |
16900 |
公司只做原装,可来电咨询 |
询价 | ||
STMicro |
22+ |
NA |
30000 |
原装正品支持实单 |
询价 | ||
ST/意法 |
25+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
25+ |
PowerFLAT8x8-5 |
10000 |
原装公司现货 |
询价 | ||
ST/意法半导体 |
22+ |
PowerFLAT8x8-5 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ADI |
23+ |
QFN |
8000 |
只做原装现货 |
询价 | ||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
ST/意法 |
23+ |
QFN |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |