STGP12NB60HD分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

STGP12NB60HD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由意法半导体集团制造生产的STGP12NB60HD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix H identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ VERY HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCHT

■ ANTIPARALLEL DIODE

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ UPS