General features

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ LOWER CRES / CIES RATIO (NO

CROSS-CONDUCTION SUSCEPTIBILITY)

■ VERY SOFT ULTRA FAST RECOVERY

ANTIPARALLEL DIODE

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

performances. The suffix H identifies a family

optimized for high frequency applications in order

to achieve very high switching performances

(reduced tfall) mantaining a low voltage drop.

Applications

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

STGP10NC60H属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGP10NC60H晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。