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STGIPQ5C60T-HZS数据手册分立半导体产品的功率驱动器模块规格书PDF

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厂商型号

STGIPQ5C60T-HZS

参数属性

STGIPQ5C60T-HZS 封装/外壳为26-PowerDIP 模块(0.846",21.48mm);包装为卷带(TR);类别为分立半导体产品的功率驱动器模块;产品描述:PWR MODULE 600V 5A 26DIP

功能描述

SLLIMM nano第2系列IPM,3相逆变器,5 A、600 V短路保护IGBT
PWR MODULE 600V 5A 26DIP

封装外壳

26-PowerDIP 模块(0.846",21.48mm)

制造商

ST STMicroelectronics

中文名称

意法半导体 意法半导体集团

数据手册

原厂下载下载地址下载地址二

更新时间

2025-8-8 10:32:00

人工找货

STGIPQ5C60T-HZS价格和库存,欢迎联系客服免费人工找货

STGIPQ5C60T-HZS规格书详情

描述 Description

This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and more easily screwed-on heat sink, and is optimized for thermal performance and compactness in built-in motor applications or other low power applications where assembly space is limited. This IPM includes a completely uncommitted operational amplifier and a comparator that can be used to design a fast and efficient protection circuit.

特性 Features

• IPM 5 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
• 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
• Internal bootstrap diode
• Optimized for low electromagnetic interference
• Undervoltage lockout
• Short-circuit rugged TFS IGBTs
• Shutdown function
• Interlocking function
• Op-amp for advanced current sensing
• Comparator for fault protection against overcurrent
• NTC (UL 1434 CA 2 and 4)
• Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
• Isolation ratings of 1800 Vrms/min.
• UL recognition: UL 1557, file E81734

简介

STGIPQ5C60T-HZS属于分立半导体产品的功率驱动器模块。由制造生产的STGIPQ5C60T-HZS功率驱动器模块功率驱动器模块为电源组件(通常为半桥或单相、两相或三相配置的 IGBT 和 MOSFET)提供物理防护。功率半导体或裸片将焊接或烧结在基材上,后者可承载功率半导体并在需要时提供电和热触点以及电绝缘。功率模块提供更高的功率密度,并且在许多情况下更可靠且更易于冷却。

技术参数

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  • 制造商编号

    :STGIPQ5C60T-HZS

  • 生产厂家

    :ST

  • Package

    :N2DIP-26L

  • Breakdown Voltage_max(V)

    :600

  • Collector Current_max(@ Tc=25°C)(A)

    :5

  • Current Rating_max

    :10

  • VCE(sat)_typ(@ IC Characterization)(V)

    :1.7

  • Switching Frequency_max(kHz)

    :20

  • PTOT_nom(W)

    :13.6

  • Topology

    :3-phase inverter

  • Substrate Material

    :Full Molded

  • Embedded power switches

    :IGBTs

  • Logical Function

    :Positive inputs

  • Other Features

    :Built-in NTC

  • Protection Option Type

    :Undervoltage lockout

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
两年内
NA
78
实单价格可谈
询价
ST
24+
N2DIP-26L
16900
支持样品,原装现货,提供技术支持!
询价
ST
22+
26N2DIP
9000
原厂渠道,现货配单
询价
ST/意法
24+
N2DIP-26L
12500
中联芯只做原装
询价
STM
23+
DIP-26L
50000
全新原装正品现货,支持订货
询价
ST/意法
24+
NA
14280
强势渠道订货 7-10天
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
STMicroelectronics
24+
26-N2DIP
53200
一级代理/放心采购
询价
ST/意法半导体
21+
N2DIP-26L
10000
只做原装,质量保证
询价
ST/意法
23+
DIP26
50000
全新原装正品现货,支持订货
询价