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STGIPQ5C60T-HZS数据手册分立半导体产品的功率驱动器模块规格书PDF

厂商型号 |
STGIPQ5C60T-HZS |
参数属性 | STGIPQ5C60T-HZS 封装/外壳为26-PowerDIP 模块(0.846",21.48mm);包装为卷带(TR);类别为分立半导体产品的功率驱动器模块;产品描述:PWR MODULE 600V 5A 26DIP |
功能描述 | SLLIMM nano第2系列IPM,3相逆变器,5 A、600 V短路保护IGBT |
封装外壳 | 26-PowerDIP 模块(0.846",21.48mm) |
制造商 | ST STMicroelectronics |
中文名称 | 意法半导体 意法半导体集团 |
数据手册 | |
更新时间 | 2025-8-8 10:32:00 |
人工找货 | STGIPQ5C60T-HZS价格和库存,欢迎联系客服免费人工找货 |
STGIPQ5C60T-HZS规格书详情
描述 Description
This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and more easily screwed-on heat sink, and is optimized for thermal performance and compactness in built-in motor applications or other low power applications where assembly space is limited. This IPM includes a completely uncommitted operational amplifier and a comparator that can be used to design a fast and efficient protection circuit.
特性 Features
• IPM 5 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
• 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
• Internal bootstrap diode
• Optimized for low electromagnetic interference
• Undervoltage lockout
• Short-circuit rugged TFS IGBTs
• Shutdown function
• Interlocking function
• Op-amp for advanced current sensing
• Comparator for fault protection against overcurrent
• NTC (UL 1434 CA 2 and 4)
• Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
• Isolation ratings of 1800 Vrms/min.
• UL recognition: UL 1557, file E81734
简介
STGIPQ5C60T-HZS属于分立半导体产品的功率驱动器模块。由制造生产的STGIPQ5C60T-HZS功率驱动器模块功率驱动器模块为电源组件(通常为半桥或单相、两相或三相配置的 IGBT 和 MOSFET)提供物理防护。功率半导体或裸片将焊接或烧结在基材上,后者可承载功率半导体并在需要时提供电和热触点以及电绝缘。功率模块提供更高的功率密度,并且在许多情况下更可靠且更易于冷却。
技术参数
更多- 制造商编号
:STGIPQ5C60T-HZS
- 生产厂家
:ST
- Package
:N2DIP-26L
- Breakdown Voltage_max(V)
:600
- Collector Current_max(@ Tc=25°C)(A)
:5
- Current Rating_max
:10
- VCE(sat)_typ(@ IC Characterization)(V)
:1.7
- Switching Frequency_max(kHz)
:20
- PTOT_nom(W)
:13.6
- Topology
:3-phase inverter
- Substrate Material
:Full Molded
- Embedded power switches
:IGBTs
- Logical Function
:Positive inputs
- Other Features
:Built-in NTC
- Protection Option Type
:Undervoltage lockout
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
两年内 |
NA |
78 |
实单价格可谈 |
询价 | ||
ST |
24+ |
N2DIP-26L |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
22+ |
26N2DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
24+ |
N2DIP-26L |
12500 |
中联芯只做原装 |
询价 | ||
STM |
23+ |
DIP-26L |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
STMicroelectronics |
24+ |
26-N2DIP |
53200 |
一级代理/放心采购 |
询价 | ||
ST/意法半导体 |
21+ |
N2DIP-26L |
10000 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
DIP26 |
50000 |
全新原装正品现货,支持订货 |
询价 |