STD8N65M5中文资料N沟道650 V、0.56 Ohm典型值、7 A MDmesh M5功率MOSFET,DPAK封装数据手册ST规格书
STD8N65M5规格书详情
描述 Description
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
特性 Features
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
:STD8N65M5
- 生产厂家
:ST
- Package
:DPAK
- Grade
:Industrial
- VDSS(V)
:650
- RDS(on)_max(@ VGS=10V)(Ω)
:0.6
- Drain Current (Dc)_max(A)
:7
- PTOT_max(W)
:70
- Qg_typ(nC)
:15
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST/意法 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-252-3 (DPAK) |
50000 |
原装正品 支持实单 |
询价 | ||
ST(意法) |
24+ |
N/A |
8248 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
24+ |
60 |
询价 | |||||
ST/意法 |
24+ |
84000 |
只做原装进口现货 |
询价 |