N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：117.93 Kbytes 页数：10 Pages

Samhop

三合微科

Mosfets

Samhop

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：117.93 Kbytes 页数：10 Pages

Samhop

三合微科

N-Channel MOSFET uses advanced trench technology

文件：674.87 Kbytes 页数：5 Pages

DOINGTER

杜因特

Super high dense cell design for low RDS(ON).

文件：129.979 Kbytes 页数：10 Pages

Samhop

三合微科