N沟道600 V、1.38 Ohm典型值、3.5 A MDmesh DM2功率MOSFET，DPAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

文件：817.03 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

原厂封装

ST

上传：深圳市华来深电子有限公司

TO252

ST

上传：深圳市纳艾斯科技有限公司

TO-252

STMICROELECTRONICS

意法半导体

上传：深圳市壹芯创科技有限公司