丝印：4N80K5；Package：DPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，DPAK封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Power MOSFET

文件：2.12054 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel Enhanced mode TO-220F/TO-251N MOSFET

文件：762.98 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

文件：1.14428 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技