STD4N80K5数据手册ST中文资料规格书
STD4N80K5规格书详情
描述 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
特性 Features
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
技术参数
- 制造商编号
：STD4N80K5
- 生产厂家
：ST
- Package
：DPAK
- Grade
：Industrial
- VDSS(V)
：800
- RDS(on)_max(@ VGS=10V)(Ω)
：2.5
- Drain Current (Dc)_max(A)
：2.5
- PTOT_max(W)
：60
- Qg_typ(nC)
：10.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
DPAK |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
24+ |
NA/ |
90 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价STD4N80K5即刻询购立享优惠#长期有货 |
询价 | ||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
询价 | ||
ST/意法 |
24+ |
TO-252-3 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST |
2017 |
TO252-3 |
427 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STMicro |
22+ |
NA |
30000 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
22+ |
TO-252-3 |
10000 |
只有原装,原装,假一罚十 |
询价 |
