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STD2HNK60Z中文资料N沟道600 V、4.4 Ohm、2 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，DPAK封装数据手册ST规格书
STD2HNK60Z规格书详情
描述 Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
特性 Features
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
技术参数
- 制造商编号
：STD2HNK60Z
- 生产厂家
：ST
- Package
：DPAK
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：4.8
- Drain Current (Dc)_max(A)
：2
- PTOT_max(W)
：45
- Qg_typ(nC)
：11
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
STMICROELECTRONICS |
2023+ |
SMD |
10000 |
安罗世纪电子只做原装正品货 |
询价 | ||
ST/意法 |
24+ |
TO-252 |
22055 |
郑重承诺只做原装进口现货 |
询价 | ||
ST/意法 |
2023+ |
TO-252 |
1890 |
原厂全新正品旗舰店优势现货 |
询价 | ||
ST |
24+ |
TO252 |
16500 |
只做原装正品现货 假一赔十 |
询价 | ||
ST |
24+ |
TO252 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
询价 | ||
STM |
24+/25+ |
DPAK(TO-252) |
10000 |
原装正品现货库存价优 |
询价 | ||
ST专家 |
24+ |
DPAK |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
ST |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 |
