首页>STD28P3LLH6AG>规格书详情
STD28P3LLH6AG中文资料Automotive-grade P-channel -30 V, 0.027 Ohm typ., -12 A, STripFET H6 Power MOSFET in a DPAK package数据手册ST规格书
STD28P3LLH6AG规格书详情
描述 Description
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with anew trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.
特性 Features
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Logic level
技术参数
- 制造商编号
:STD28P3LLH6AG
- 生产厂家
:ST
- Package
:DPAK
- Grade
:Automotive
- VDSS(V)
:-30
- RDS(on)_max(@ 4.5/5V)(Ω)
:0.05
- RDS(on)_max(@ VGS=10V)(Ω)
:0.03
- Drain Current (Dc)_max(A)
:-12
- PTOT_max(W)
:33
- Qg_typ(nC)
:29
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-263 |
30000 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8080 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST/意法 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
2021+ |
TO-252-3 |
1000 |
只做原装,可提供样品 |
询价 |


