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STD1NK60

N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

STD1NK60

N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60-1

N沟道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET,IPAK封装; • Extremely high dv/dt capability \n• ESD improved capability \n• 100% avalanche tested \n• Gate charge minimized;

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.\n\n

STSTMicroelectronics

意法半导体意法半导体集团

STD1NK60-1

N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60-1

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60T4

N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60T4

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD1NK60_08

N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

技术参数

  • Package:

    IPAK

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    8.5

  • Drain Current (Dc)_max(A):

    1

  • PTOT_max(W):

    30

  • Qg_typ(nC):

    7

供应商型号品牌批号封装库存备注价格
ST
2010
TO251
50000
只做全新原装诚信经营现货长期供应
询价
ST/意法
24+
TO-252
20000
只做原厂渠道 可追溯货源
询价
ST/意法
24+
TO-252
504524
免费送样原盒原包现货一手渠道联系
询价
ST
25+
TO252
6500
十七年专营原装现货一手货源,样品免费送
询价
ST
2430+
SOT252
8540
只做原装正品假一赔十为客户做到零风险!!
询价
ST
24+
TO-251
216
询价
ST
2015+
IPAKTO-
12500
全新原装,现货库存长期供应
询价
ST
24+
TO-252
2026
原装现货热卖
询价
ST
23+
TO-252
8795
询价
ST
22+
TO-252
5000
原装现货库存.价格优势
询价
更多STD1NK60供应商 更新时间2025-7-27 9:17:00