N-Channel 650V (D-S)Power MOSFET

文件：1.08395 Mbytes 页数：9 Pages

VBSEMI

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N-Channel 650 V (D-S) MOSFET

文件：1.08802 Mbytes 页数：9 Pages

VBSEMI

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N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

文件：429.23 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08802 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET，IPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • Extremely high dv/dt capability \n• ESD improved capability \n• 100% avalanche tested \n• Gate charge minimized;

ST

意法半导体

N沟道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET，DPAK封装

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t • Extremely high dv/dt capability \n• ESD improved capability \n• 100% avalanche tested \n• Gate charge minimized;

ST

意法半导体