首页 >STD13NM60N-H>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
13A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI짼PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS |
详细参数
- 型号:
STD13NM60N-H
- 制造商:
STMicroelectronics
- 功能描述:
N-channel 600 V, 0.28
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST原装正品现货 |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ST |
22+23+ |
TO252 |
21402 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
22+ |
TO252 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
ST/意法 |
22+ |
TO252 |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
ST/意法 |
22+ |
TO252 |
28000 |
原装现货只有原装.假一罚十 |
询价 | ||
ST/意法 |
21+ |
TO-252 |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
ST/意法 |
23+ |
TO-252-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
2022 |
TO-252-3 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST/意法 |
TO-252 |
货真价实,假一罚十 |
25000 |
询价 | |||
ST/意法 |
22+ |
TO-252 |
31250 |
郑重承诺只做原装进口现货 |
询价 |
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