N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.37238 Mbytes 页数：19 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

文件：308.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK

文件：1.37238 Mbytes 页数：19 Pages

STMICROELECTRONICS

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N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

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