N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：85.93 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N沟道55V 0.005 Ohm 80A D2PAK STripFET™ MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature SizeTM\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • TYPICAL RDS(on) = 0.005 Ω \n• LOGIC LEVEL DEVICE \n• LOW THRESHOLD DRIVE \n• SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”);

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：998.21 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：83.9 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体